3. 강의목표
- Introduction of semiconductor memory devices (DRAM and FLASH) technology and scaling issues
- Device physics of various new memory devices (SONOS, ReRAM, PRAM, & MRAM)
4. 강의선수/수강필수사항
Basic semiconductor device course
5. 성적평가
○ Mid-term Exam (50%) & Final Exam (50%)
6. 강의교재
| 도서명 |
저자명 |
출판사 |
출판년도 |
ISBN |
|
Semiconductor Memory Devices and Circuits
|
Shimeng Yu
|
CRC Press
|
1922
|
9781003138747
|
7. 참고문헌 및 자료
○ W. D. Brown & J. E. Brewer, “"Nonvolatile Semiconductor Memory Technology,”" IEEE Press (1998)
○ Phase Change Materials: Science and Applications, by Simone Raoux and Matthias Wuttig (2008)
○ Silicon VLSI technology, J. D. Plummer, M. Deal, P. B. Griffin, Prentice Hall 2000
8. 강의진도계획
○ 1st week: Memory technology overview
○ 2-4th week: FLASH device/process technology
○ 5-7th week: DRAM device/process technology
○ 8th week: Mid-term EXAM
○ 9th week: New-memory-1 (overview)
○ 10th week: New-memory-2 (ReRAM)
○ 11th week: New-memory-3 (PRAM)
○ 12th week: New-memory-4 (MRAM)
○ 13th week: New-memory-5 (Selector & SOM)
○ 14-15th week: Neuromorphic Devices
○ 16th week: FINAL EXAM
11. 장애학생에 대한 학습지원 사항
- 수강 관련: 문자 통역(청각), 교과목 보조(발달), 노트필기(전 유형) 등
- 시험 관련: 시험시간 연장(필요시 전 유형), 시험지 확대 복사(시각) 등
- 기타 추가 요청사항 발생 시 장애학생지원센터(279-2434)로 요청