This course covers the operating principles, scaling issues, and integration process technologies of DRAM and FLASH, the leading memory semiconductor technologies currently in mass production. It also explores next-generation non-volatile memories such as PRAM, MRAM, RRAM, and SOM, examining their fundamental operating principles and the technical challenges for their mass production. Furthermore, the course provides a brief introduction to neuromorphic semiconductor devices that utilize these emerging memory technologies. Through this course, by introducing real-world case studies from the R&D stages of semiconductor companies, students will learn practical technology development methodologies along with theoretical knowledge.

Basic semiconductor device course

○ Mid-term Exam (50%) & Final Exam (50%)

Silicon VLSI technology, J. D. Plummer, M. Deal, P. B. Griffin, Prentice Hall 2000

○ 1st week: Memory technology overview
○ 2-4th week: FLASH device/process technology and Current R&D trend of Memory companies
○ 5-7th week: DRAM device/process technology and Current R&D trend of Memory companies
○ 8th week: Mid-term EXAM
○ 9th week: New-memory-1 (overview)
○ 10th week: New-memory-2 (ReRAM)
○ 11th week: New-memory-3 (PRAM)
○ 12th week: New-memory-4 (MRAM)
○ 13th week: New-memory-5 (Selector & SOM)
○ 14-15th week: Neuromorphic Devices
○ 16th week: FINAL EXAM

○ GSST 전공선택 분야: 반도체 소자/소재