This course introduces semiconductor crystals, basic quantum mechanics (Schrodinger equation), band theory, electrons and holes, basic statistical physics, carrier transport for the understanding of semicondctor devices.

General physics I and II

Mid Exam 35%, Final Exam 50%, Homework 10%, Attendance 5%

- Lecture notes
- A. Beiser, Concepts of Modern Phyiscs, 6th ed., Mc Graw Hill
- R. F. Pierret, Advanced Semiconductor Fundamentals, 2nd ed., Prentice Hall
- B. G. Streetman and S. K. Kumar, Solid State Electronic Devices, 6th ed., Prentice Hall

Ch1 INTRODUCTION

Ch2 ELEMENTS OF QUANTUM MECHANICS
2.1 Quantum Concept
2.2 Atomic Spectra and Bohr Atom
2.3 Schrodinger Equation
2.4 Simple Potential Problems
2.5 Quantum Scattering
2.6 Atomic Structure and Periodic Table

Ch3 ENERGY BANDS
3.1 Crystal Binding
3.2 Formation of Energy Bands
3.3 Energy Band Structure
3.3.1 Periodic potential and Bloch Theorem
3.3.2 Periodic potential well (1D Crystal)
3.3.3 Effective Mass in Crystals
3.4 Electrons and Holes

Ch4 EQUILIBRIUM CARRIER STATISTICS
4.1 Density of States
4.2 Fermi-Dirac Distribution Function
4.3 Equilibrium Carrier Densities
4.3.1 Intrinsic Semiconductors
4.3.2 Extrinsic Semiconductors

Ch5 CARRIER TRANSPORT
5.1 Drift current
5.1.1 Effects of temperature and doping on mobility
5.1.2 High field effect
5.1.3 Hall effect
5.2 Diffusion current
5.3 Invariance of Fermi level of equilibrium
5.4 Built-in field and band bending

Ch6 EXCESS CARRIERS IN SEMICONDUCTORS
6.1 Optical excitation of carriers
6.2 Generation and Recombination of carriers
6.3 Quasi-Fermi levels
6.3.1 Non-equilibrium carrier densities and quasi-Fermi level
6.3.2 Currents and spatially varying quasi-Fermi levels
6.4 Transport and Recombination

Ch7 JUCTIONS (optional)
7.1 Fabrication of p-n junction
7.2 Junctions at Equilibrium
7.2.1 Contact Potential and Depletion Approximation
7.2.2 Abrupt p-n Junction
7.3 Biased Junctions
7.4 Currents in Biased Junction: Minority Carrier Injection and Extraction
7.4.1 Diffusion current model
7.4.2 Recombination current model
7.4.3 One-sided p-n junctions
7.4.4 Band Diagram, Carrier density and current
7.5 Reverse Breakdown
7.5.1 Zener Breakdown
7.5.2 Avalanche Breakdown
7.6 Transient and AC conditions
7.6.1 Time variation of stored charge and junction voltage
7.6.2 AC Bias-Reverse Recovery transient
7.6.3 Capacitance of p-n junction
7.7 Deviations From The Simple Theory

Blended Learning (온라인 병행강좌): Online Class (온라인 강좌) 30%, Real time Online Class (실시간 화상강좌) 70%