3. 강의목표
This course covers the electronic properties and the charge transport in semiconductors. It provides fundamental theory and operating principles of various semiconductor devices such as p-n junction diode, bipolar junction transistor (BJT), metal-oxide-semiconductor (MOS) capacitor and MOS field effect transistor (MOSFET).
5. 성적평가
Attendance: 10%
1st Midterm exam, Oct. 15 : 30%
2nd Midterm exam, Nov. 12 : 30%
Final exam, Dec. 17: 30%
6. 강의교재
| 도서명 |
저자명 |
출판사 |
출판년도 |
ISBN |
|
Solid State Electronic Devices, 7th edition
|
B. G. Streetman and S. K. Banerjee
|
Prentice Hall
|
2016
|
|
7. 참고문헌 및 자료
http://jas.eng.buffalo.edu/
https://nanohub.org/
8. 강의진도계획
1. Introduction
- Crystal properties, atoms and electrons, crystal growth, etc. (1st week)
2. Energy bands and charge carriers in semiconductor (2nd week ~ 4th week)
- Bonding Forces and Energy Bands in Solids - Charge Carriers in Semiconductors
- Carrier Concentrations. The Fermi Level - Drift of Carriers in Electric and Magnetic Fields
- Conductivity and Mobility - Invariance of the Fermi Level at Equilibrium.
3. Excess carriers in semiconductors (5th week ~ 7th week)
- Optical Absorption. Luminescence - Carrier Lifetime and Photoconductivity
- Diffusion and Drift of Carriers - Diffusion and Recombination
4. PN Junction (9th week ~ 13th week)
- PN diode fabrication - Energy diagram (PN electrostatics)
- I-V characteristics (ideal diode) - Minority & Majority currents
- Junction capacitance - Junction model
- junction breakdown - generation / recombination current
5. Metal-Semiconductor Contact (14th week ~ 15th week)
- Ideal MS contacts - Energy diagram
- Current / voltage characteristics
11. 장애학생에 대한 학습지원 사항
- 수강 관련: 문자 통역(청각), 교과목 보조(발달), 노트필기(전 유형) 등
- 시험 관련: 시험시간 연장(필요시 전 유형), 시험지 확대 복사(시각) 등
- 기타 추가 요청사항 발생 시 장애학생지원센터(279-2434)로 요청